為(wei)什么(me)在風(feng)電變流(liu)器中SiC碳化硅(gui)MOSFET模塊會替代IGBT模塊！

使用基本(ben)公司SiC碳(tan)化(hua)硅MOSFET功率(lv)模塊打造全SiC碳(tan)化(hua)硅風電變(bian)流器！-傾佳電子（Changer Tech）專(zhuan)業(ye)分銷(xiao)

使用基本(ben)公司SiC碳化硅MOSFET功率(lv)(lv)模(mo)塊升級傳統IGBT模(mo)塊風電變(bian)流器(qi)(qi)(qi)，實現更(geng)高的風電變(bian)流器(qi)(qi)(qi)效率(lv)(lv)，更(geng)小的風電變(bian)流器(qi)(qi)(qi)體積重量！更(geng)低(di)的風電變(bian)流器(qi)(qi)(qi)成本(ben)！

隨著銅價暴漲高燒不退(tui)，如何降(jiang)(jiang)低(di)電(dian)感(gan)等磁性(xing)元(yuan)件成本(ben)將(jiang)成為電(dian)力電(dian)子制(zhi)造(zao)商的(de)一(yi)大痛點(dian)，使用基本(ben)公司(si)碳化(hua)(hua)硅(gui)MOSFET單管或者模塊替代IGBT單管或模塊，可(ke)以顯(xian)著提(ti)頻降(jiang)(jiang)低(di)系統(tong)綜合成本(ben)（電(dian)感(gan)磁性(xing)元(yuan)件，散(san)熱(re)系統(tong)，整機重(zhong)量），電(dian)力電(dian)子系統(tong)的(de)全(quan)碳SiC時代，未來(lai)已來(lai)！傾佳電(dian)子（Changer Tech）專業分銷基本(ben)公司(si)SiC碳化(hua)(hua)硅(gui)MOSFET！

傾佳電子（Changer Tech）致力于基本公司國產碳化硅（SiC）MOSFET功率器件在電力電子市場的推廣！Changer Tech-Authorized Distributor of BASiC Semiconductor which committed to the promotion of BASiC? silicon carbide (SiC) MOSFET power devices in the power electronics market!

基本公司SiC碳化硅MOSFET模(mo)塊(kuai)適用于風(feng)電(dian)變流器(qi)，比如(ru)雙(shuang)饋(kui)風(feng)電(dian)變流器(qi)和全(quan)功率(lv)風(feng)電(dian)變流器(qi)等。

基本公(gong)司SiC碳(tan)化硅(gui)(gui)MOSFET模(mo)塊的(de)阻斷電(dian)(dian)壓高(gao),開關(guan)速度(du)快,耐高(gao)溫.基本公(gong)司SiC碳(tan)化硅(gui)(gui)MOSFET模(mo)塊的(de)雙饋風(feng)力發(fa)電(dian)(dian)典型(xing)變流(liu)器拓撲(pu)系統(tong)在3 kHz開關(guan)頻率(lv)下(xia),全(quan)SiC碳(tan)化硅(gui)(gui)風(feng)電(dian)(dian)變流(liu)器兩電(dian)(dian)平(ping)(ping)變流(liu)器較IGBT模(mo)塊兩電(dian)(dian)平(ping)(ping)效率(lv)提(ti)高(gao)3％,全(quan)SiC碳(tan)化硅(gui)(gui)風(feng)電(dian)(dian)變流(liu)器三(san)電(dian)(dian)平(ping)(ping)變流(liu)器效率(lv)提(ti)高(gao)1％.

使用(yong)(yong)基本(ben)公司(si)SiC碳(tan)化(hua)硅(gui)(gui)MOSFET模(mo)(mo)(mo)塊(kuai)的(de)(de)(de)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)和IGBT模(mo)(mo)(mo)塊(kuai)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)的(de)(de)(de)效率(lv)(lv)、體(ti)積和成本(ben)進行了比較。使用(yong)(yong)基本(ben)公司(si)SiC碳(tan)化(hua)硅(gui)(gui)MOSFET模(mo)(mo)(mo)塊(kuai)的(de)(de)(de)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)的(de)(de)(de)實際(ji)熱模(mo)(mo)(mo)型進行模(mo)(mo)(mo)擬得出的(de)(de)(de)結論是，在(zai)風(feng)(feng)力發(fa)電(dian)(dian)系(xi)統(tong)(tong)(tong)中(zhong)應(ying)用(yong)(yong)SiC碳(tan)化(hua)硅(gui)(gui)MOSFET模(mo)(mo)(mo)塊(kuai)將提供逼IGBT模(mo)(mo)(mo)塊(kuai)更(geng)高的(de)(de)(de)效率(lv)(lv)，但(dan)會大(da)幅度減小(xiao)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)系(xi)統(tong)(tong)(tong)尺(chi)寸。隨著基本(ben)公司(si)SiC碳(tan)化(hua)硅(gui)(gui)MOSFET模(mo)(mo)(mo)塊(kuai)價(jia)格的(de)(de)(de)降低，該(gai)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)系(xi)統(tong)(tong)(tong)的(de)(de)(de)優勢將更(geng)加明顯，因(yin)為在(zai)這種情況下濾波器(qi)(qi)(qi)成本(ben)要低得多。使用(yong)(yong)基本(ben)公司(si)SiC碳(tan)化(hua)硅(gui)(gui)MOSFET模(mo)(mo)(mo)塊(kuai)的(de)(de)(de)轉換(huan)系(xi)統(tong)(tong)(tong)節省整個(ge)系(xi)統(tong)(tong)(tong)成本(ben)和體(ti)積，對效率(lv)(lv)、體(ti)積和成本(ben)應(ying)用(yong)(yong)不(bu)同權(quan)重的(de)(de)(de)成本(ben)函數（效率(lv)(lv)較小(xiao)，成本(ben)和體(ti)積相等）表明，與IGBT模(mo)(mo)(mo)塊(kuai)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)相比，使用(yong)(yong)30 kHz 開關頻率(lv)(lv)的(de)(de)(de)基本(ben)公司(si)SiC碳(tan)化(hua)硅(gui)(gui)MOSFET模(mo)(mo)(mo)塊(kuai)的(de)(de)(de)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)具(ju)有最佳價(jia)值(zhi)，在(zai)減小(xiao)風(feng)(feng)電(dian)(dian)變(bian)流(liu)(liu)器(qi)(qi)(qi)體(ti)積方面(mian)的(de)(de)(de)優勢更(geng)為明顯。

IGBT芯(xin)(xin)片(pian)技術不(bu)斷(duan)發(fa)展，但(dan)是從一(yi)代芯(xin)(xin)片(pian)到(dao)下(xia)一(yi)代芯(xin)(xin)片(pian)獲得的(de)(de)(de)改進幅度越(yue)來(lai)(lai)越(yue)小。這表明IGBT每一(yi)代新芯(xin)(xin)片(pian)都越(yue)來(lai)(lai)越(yue)接近材料本身的(de)(de)(de)物(wu)理極限。SiC MOSFET寬禁帶(dai)半導(dao)體(ti)提(ti)供了實現半導(dao)體(ti)總功率(lv)(lv)損(sun)耗的(de)(de)(de)顯(xian)著(zhu)降(jiang)(jiang)低(di)(di)的(de)(de)(de)可能性。使用SiC MOSFET可以(yi)(yi)降(jiang)(jiang)低(di)(di)開關(guan)損(sun)耗，從而提(ti)高(gao)開關(guan)頻(pin)率(lv)(lv)。進一(yi)步的(de)(de)(de)，可以(yi)(yi)優化濾(lv)波器組件，相應(ying)的(de)(de)(de)損(sun)耗會下(xia)降(jiang)(jiang)，從而全面減少系統損(sun)耗。通過采用低(di)(di)電感SiC MOSFET功率(lv)(lv)模塊(kuai)，與同(tong)樣封裝的(de)(de)(de)Si IGBT模塊(kuai)相比，功率(lv)(lv)損(sun)耗可以(yi)(yi)降(jiang)(jiang)低(di)(di)約70%左(zuo)右，可以(yi)(yi)將開關(guan)頻(pin)率(lv)(lv)提(ti)5倍（實現顯(xian)著(zhu)的(de)(de)(de)濾(lv)波器優化），同(tong)時(shi)保持最高(gao)結溫低(di)(di)于(yu)最大規(gui)定值。

為了(le)保(bao)持電(dian)(dian)力電(dian)(dian)子系統競(jing)爭優勢(shi)，同時也為了(le)使最終用戶獲得經(jing)濟效益，一定程度的(de)(de)效率和緊(jin)湊性成為每一種(zhong)電(dian)(dian)力電(dian)(dian)子應(ying)用功率轉換應(ying)用的(de)(de)優勢(shi)所在。隨著(zhu)IGBT技術(shu)到達發展瓶頸，加上(shang)SiC MOSFET絕對成本持續下降，使用SiC MOSFET替代升級IGBT已經(jing)成為各類(lei)型(xing)電(dian)(dian)力電(dian)(dian)子應(ying)用的(de)(de)主流(liu)趨勢(shi)。

傾(qing)佳電(dian)(dian)(dian)(dian)子(zi)（Changer Tech）專(zhuan)業(ye)分(fen)銷基本(ben)(ben)(ben)?（BASiC Semiconductor）碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)SiC功率MOSFET,BASiC基本(ben)(ben)(ben)?碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)MOSFET模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，BASiC基本(ben)(ben)(ben)?單(dan)管SiC碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)MOSFET，BASiC基本(ben)(ben)(ben)?SiC碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)MOSFET模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，BASiC基本(ben)(ben)(ben)?SiC碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)MOSFET模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，BASiC基本(ben)(ben)(ben)?I型(xing)三電(dian)(dian)(dian)(dian)平IGBT模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，BASiC基本(ben)(ben)(ben)?T型(xing)SiC碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)MOSFET模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，BASiC基本(ben)(ben)(ben)?混合(he)SiC-IGBT單(dan)管，BASiC基本(ben)(ben)(ben)?混合(he)SiC-IGBT模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，碳(tan)(tan)(tan)化(hua)硅(gui)(gui)(gui)(SiC)MOSFET專(zhuan)用(yong)雙(shuang)(shuang)通(tong)(tong)(tong)道隔(ge)離驅動(dong)(dong)(dong)芯片(pian)(pian)BTD25350，單(dan)通(tong)(tong)(tong)道隔(ge)離驅動(dong)(dong)(dong)芯片(pian)(pian)BTD5350,雙(shuang)(shuang)通(tong)(tong)(tong)道隔(ge)離驅動(dong)(dong)(dong)芯片(pian)(pian)BTD21520,單(dan)通(tong)(tong)(tong)道隔(ge)離驅動(dong)(dong)(dong)芯片(pian)(pian)（帶VCE保(bao)護(hu)）BTD3011,BASiC基本(ben)(ben)(ben)?混合(he)SiC-IGBT三電(dian)(dian)(dian)(dian)平模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)應用(yong)于光伏(fu)(fu)逆(ni)變(bian)(bian)(bian)器(qi)(qi)(qi)(qi)，雙(shuang)(shuang)向AC-DC電(dian)(dian)(dian)(dian)源(yuan)，戶用(yong)光伏(fu)(fu)逆(ni)變(bian)(bian)(bian)器(qi)(qi)(qi)(qi)，戶用(yong)光儲(chu)一(yi)體機(ji)(ji)，儲(chu)能變(bian)(bian)(bian)流(liu)器(qi)(qi)(qi)(qi)，儲(chu)能PCS,雙(shuang)(shuang)向LLC電(dian)(dian)(dian)(dian)源(yuan)模(mo)(mo)(mo)(mo)(mo)(mo)塊(kuai)，儲(chu)能PCS-Buck-Boost電(dian)(dian)(dian)(dian)路(lu)，光儲(chu)一(yi)體機(ji)(ji),PCS雙(shuang)(shuang)向變(bian)(bian)(bian)流(liu)器(qi)(qi)(qi)(qi)，三相(xiang)維也納PFC電(dian)(dian)(dian)(dian)路(lu),三電(dian)(dian)(dian)(dian)平LLC直流(liu)變(bian)(bian)(bian)換器(qi)(qi)(qi)(qi),移相(xiang)全橋拓(tuo)撲(pu)等新能源(yuan)領(ling)域。在(zai)光伏(fu)(fu)逆(ni)變(bian)(bian)(bian)器(qi)(qi)(qi)(qi)、光儲(chu)一(yi)體機(ji)(ji)、儲(chu)能變(bian)(bian)(bian)流(liu)器(qi)(qi)(qi)(qi)PCS、OBC車載充(chong)電(dian)(dian)(dian)(dian)器(qi)(qi)(qi)(qi)，熱管理電(dian)(dian)(dian)(dian)動(dong)(dong)(dong)壓縮機(ji)(ji)驅動(dong)(dong)(dong)器(qi)(qi)(qi)(qi)，射(she)頻(pin)電(dian)(dian)(dian)(dian)源(yuan)，PET電(dian)(dian)(dian)(dian)力(li)電(dian)(dian)(dian)(dian)子(zi)變(bian)(bian)(bian)壓器(qi)(qi)(qi)(qi)，氫燃料空壓機(ji)(ji)驅動(dong)(dong)(dong)，大功率工(gong)業(ye)電(dian)(dian)(dian)(dian)源(yuan)，工(gong)商業(ye)儲(chu)能變(bian)(bian)(bian)流(liu)器(qi)(qi)(qi)(qi)，變(bian)(bian)(bian)頻(pin)器(qi)(qi)(qi)(qi)，變(bian)(bian)(bian)槳伺(si)服驅動(dong)(dong)(dong)輔助電(dian)(dian)(dian)(dian)源(yuan)，高(gao)頻(pin)逆(ni)變(bian)(bian)(bian)焊機(ji)(ji)，高(gao)頻(pin)伺(si)服驅動(dong)(dong)(dong)，AI服務器(qi)(qi)(qi)(qi)電(dian)(dian)(dian)(dian)源(yuan)，算力(li)電(dian)(dian)(dian)(dian)源(yuan)，數據(ju)中心電(dian)(dian)(dian)(dian)源(yuan)，機(ji)(ji)房UPS等領(ling)域與客(ke)戶戰(zhan)略合(he)作，傾(qing)佳電(dian)(dian)(dian)(dian)子(zi)（Changer Tech）全力(li)支持(chi)中國電(dian)(dian)(dian)(dian)力(li)電(dian)(dian)(dian)(dian)子(zi)工(gong)業(ye)發展！

傾佳電子（Changer Tech）-專業汽車連接器及功率半導體(SiC碳化硅MOSFET單管，SiC碳化硅MOSFET模塊，碳化硅SiC-MOSFET，氮化鎵GaN，驅動IC)分銷商，聚焦新能源、交通電動化、數字化轉型三大方向，致力于服務中國工業電源，電力電子裝備及新能源汽車產業鏈。在新型能源體系的發展趨勢場景下，融合數字技術、電力電子技術、熱管理技術和儲能管理技術，以實現發電的低碳化、用能的電氣化和用電的高效化，以及“源、網、荷、儲、車”的協同發展。傾佳電子（Changer Tech）-以技術創新為導向，將不斷創新技術和產品，堅定不移與產業和合作伙伴攜手，積極參與數字能源產業生態，為客戶提供高品質汽車智能互聯連接器與線束，新能源汽車連接器，新能源汽車高壓連接器與線束，直流充電座，耐高壓連接器&插座，創新型車規級互聯產品，包括線對板、板對板、輸入輸出、電源管理和FFC-FPC連接器，涵蓋2級充電站和可在30分鐘內為EV電池充滿電的3級超快速充電站的高能效電源連接器，用于地下無線充電的IP67級密封連接器。以及以技術創新為導向的各類功率半導體器件：車規碳化硅(SiC)MOSFET，大容量RC-IGBT模塊，碳化硅(SiC)MOSFET模塊，IGBT模塊，國產碳化硅(SiC)MOSFET，IPM模塊，IGBT單管，混合IGBT單管，三電平IGBT模塊，混合IGBT模塊，光伏MPPT碳化硅MOSFET，伺服驅動SiC碳化硅MOSFET，逆變焊機國產SiC碳化硅MOSFET，OBC車載SiC碳化硅MOSFET，儲能變流器PCS碳化硅MOSFET模塊，充電樁電源模塊碳化硅MOSFET，國產氮化鎵GaN，隔離驅動IC等產品，傾佳電子（Changer Tech）全面服務于中國新能源汽車行業，新能源汽車電控系統，電力電子裝備，新能源汽車充電樁系統，全液冷超充，高功率密度風冷充電模塊，液冷充電模塊，歐標充電樁，車載DCDC模塊，國網三統一充電模塊光儲變流器，分布式能源、虛擬電廠、智能充電網絡、V2X、綜合智慧能源、智能微電網智能光儲，智能組串式儲能等行業應用，傾佳電子（Changer Tech）為實現零碳發電、零碳數據中心、零碳網絡、零碳家庭等新能源發展目標奮斗，從而為實現一個零碳地球做出貢獻，邁向數字能源新時代！Changer Tech strives to achieve new energy development goals such as zero-carbon power generation, zero-carbon data centers, zero-carbon networks, and zero-carbon homes, thereby contributing to the realization of a zero-carbon earth and moving towards a new era of digital energy!